| abstract |
An object of the present invention is to provide a polishing liquid for primary polishing of an InP wafer which does not scratch the surface without using bromine and has a high polishing rate. A polishing solution containing colloidal silica having a particle diameter D of 10 nm to 300 nm and a maximum height of surface protrusions of 5 nm or more, and containing only chlorinated isocyanuric acid and not containing sodium sulfate or potassium chloride. . The ratio of the colloidal silica liquid to pure water is 5% to 20%, and the weight ratio of chlorinated isocyanuric acid is 0.5 to 1.5, based on the weight of the colloidal silica. The pH of the colloidal silica is 7-14, particularly preferably 8-11. [Selection diagram] FIG. |