http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004200223-A

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filingDate 2002-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7577a5bf1db1aac774cfa52bf49eb5f
publicationDate 2004-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004200223-A
titleOfInvention Mask blanks for charged particle beam exposure, mask blanks for charged particle beam exposure, and method of manufacturing mask
abstract Kind Code: A1 A charged particle beam exposure mask blank in which a deformation of an intermediate silicon oxide film due to stress is removed while using an SOI substrate having excellent quality of a thin film silicon layer, and a charged particle beam exposure mask blank and a method of manufacturing the mask I will provide a. SOLUTION: In a charged particle beam exposure mask blank using an SOI substrate having a silicon thin film layer and silicon on the front and back with a silicon oxide film interposed therebetween, silicon on the back surface side of the SOI substrate to be an exposure region is removed. An opening is formed, the silicon oxide film in the opening is removed, and a low-stress etching stop layer is provided in the opening. [Selection diagram] Fig. 1
priorityDate 2002-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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