| abstract |
A capacitive element capable of obtaining a larger amount of residual polarization charge, a highly reliable semiconductor device including the capacitive element, and a method of manufacturing the same are provided. A semiconductor substrate, a transistor having a word line formed on the semiconductor substrate as a gate electrode, a ferroelectric capacitor comprising a ferroelectric film sandwiched between electrodes, and a bit line. 72, planar line 68, contact plugs 52, 53 and via plugs 32, 33, 52, 53, 61, 62, 68, 69 for connecting source / drain region 44 to ferroelectric capacitor 26, bit line 72 and the like. The electrodes 25A and 25B are provided perpendicular to the polarization axis direction of the ferroelectric film 22. [Selection] Figure 5 |