Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-3956 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D11-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-395 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
2003-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2e1422f987edac98e35d91a577a0e4b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9b0aa8a92cb46c40aa114047509edd5 |
publicationDate |
2004-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2004186698-A |
titleOfInvention |
Cleaning solution for selective film removal and method for selectively removing a film in a silicide process using the cleaning solution |
abstract |
A cleaning solution for selectively removing a titanium nitride film and an unreacted metal film that does not react during a silicide film process includes an acidic solution and an iodine-containing oxidizing agent. Such a cleaning solution is also very effective for removing a photoresist film and organic substances. Further, since the cleaning solution removes tungsten, the cleaning solution can be very usefully applied to tungsten gate electrode technology, which has recently received much attention for improving device operation characteristics. [Selection diagram] FIG. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007048950-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8008194-B2 |
priorityDate |
2002-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |