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filingDate 2002-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004186593-A
titleOfInvention Low dielectric constant insulating film, method of manufacturing the same, and semiconductor device
abstract A low-dielectric-constant insulating film capable of forming a high-strength, low-dielectric-constant insulating film, a method for manufacturing the same, and a semiconductor device using the low-dielectric-constant insulating film. A siloxane resin film forming step of forming a siloxane resin film by applying a low dielectric constant insulating film forming material containing a siloxane resin on a substrate, and making the surface of the siloxane resin film hydrophilic with a surface treatment liquid. And a baking step of baking the siloxane resin film subjected to the surface treatment. An embodiment in which the surface treatment liquid is selected from an organic solvent having a hydroxyl group and an aqueous solution having a pH of 1 to 10, an embodiment in which, before the surface treatment step, an insolubilization treatment in which the siloxane resin film is heat-treated to insolubilize the surface treatment liquid, and the like are preferable. . [Selection diagram] None
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