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filingDate 2002-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ba295a8884f5b49839f9c916d2ab2bf
publicationDate 2004-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004176135-A
titleOfInvention Material for sputtering target and sintered body thereof
abstract An object of the present invention is to provide a sputtering target material capable of forming a silicon oxide thin film having excellent barrier properties against gas and moisture on the surface of a base material, and a sintered body thereof. Kind Code: A1 A sputtering method used for reactive sputtering comprising 30 to 100% of silicon monoxide and 0 to 70% of silicon dioxide (silicon: 5% or less may be contained therein). Sputtering used for target material or non-reactive sputtering composed of silicon monoxide: 30 to 90% and silicon dioxide: 10 to 70% (similarly, silicon: 5% or less may be contained) A target material, and a silicon oxide sintered body having a sintered density of 95% or more of the theoretical density obtained by pressure-sintering the above material at 1250 ° C. or more. [Selection diagram] None
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008008948-A
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type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.