| abstract |
In a semiconductor device having a CSP structure including a columnar electrode formed at a predetermined height in order to suppress the influence of thermal stress, the columnar electrode is lowered when the wiring of the CSP structure is multilayered. Therefore, it has been necessary to make a choice between suppressing the increase in the thickness of the semiconductor device or increasing the thickness of the semiconductor device to ensure the height of the columnar electrode. In a second layer wiring, the first layer wiring is placed at a position of a via hole formed in a second insulating layer interposed between the first layer wiring and the second layer wiring. The depressed portion 20 to be connected is formed, and the columnar electrode 14 is configured to be planted from the bottom surface portion of the depressed portion 7. [Selection] Figure 1 |