| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate |
2002-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93c540d308876da2d06524ec1a32d54f |
| publicationDate |
2004-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004158614-A |
| titleOfInvention |
Nonvolatile semiconductor memory device and data writing method thereof |
| abstract |
A cell area of a NAND type memory cell array is not sufficiently reduced. A plurality of transistor rows each including first and second select transistors (S1, S2) and a plurality of memory transistors (M1 to Mn) cascaded therebetween, and stacked on a semiconductor (2) in the transistor rows. And a plurality of words formed on the charge storage film and electrically connecting the gates of the memory transistors M1 to Mn in different transistor columns adjacent in the row direction. The lines WL1 to WLn, the first upper wirings BSL1a and BSL2a for supplying the first voltage V1 to the memory transistor via the first select transistor S1, and the second memory transistor via the second select transistor S2. And a second upper wiring BSL2b that supplies the voltage V2 of [Selection] Fig. 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006024938-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007157289-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011159364-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007193854-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011119025-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8213232-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8243517-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010199235-A |
| priorityDate |
2002-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |