http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004157235-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f80a7e640992b40ed091f53e7453e77e |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
filingDate | 2002-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4871c1a1f722bf82c5185b232818eca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07f65b58b6ee33b799f4fcb995440c6f |
publicationDate | 2004-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2004157235-A |
titleOfInvention | Pattern forming method of resin composition having sulfonamide structure by quantum beam |
abstract | [PROBLEMS] Current nanotechnology is a technique for mass production at high speed, unlike current optical lithography, in which molecules or atoms are individually moved to arbitrary positions by a probe such as a scanning microscope. I can't get it. Thus, research example that can lead to actual device production is no prospect of practical nanotechnology alternative to lithography do not stand. The present invention irradiates a surface of a sulfonamide polymer thin film, which is chemically converted from acidic to alkaline with a freeze rearrangement reaction by the action of a quantum beam, with a nano quantum beam that can be operated at high speed, and An object of the present invention is to provide a technique for forming a nano pattern. [Selection diagram] None |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10782612-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108137809-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3360915-A4 |
priorityDate | 2002-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.