| abstract |
An object of the present invention is to provide a semiconductor device including a nonvolatile memory device having resistance to deterioration at the time of writing / erasing data and a method of manufacturing the same. A semiconductor device according to the present invention includes a memory region forming a memory cell array in which a nonvolatile memory device is arranged in a plurality of rows and columns in a grid pattern. Above, a word gate 14 formed via a gate insulating layer 12, impurity layers 16 and 18 formed in the semiconductor layer 10, and a sidewall-shaped control formed on both side surfaces of the word gate 14. And the control gates 20, 30 have first control gates 20a, 30a and second control gates 20b, 30b adjacent to each other, and the first control gates 20a, 30a are A first silicon oxide film, a silicon nitride film, and a second silicon oxide film; The troll gates 20b and 30b are formed on the second insulating layer 24 made of a silicon oxide film. [Selection] Fig. 2 |