http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004151355-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate | 2002-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_601ba4a71019c4ad5d4dff3748ba6624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abf92c6162f276a54a5782dd87f205c1 |
publicationDate | 2004-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2004151355-A |
titleOfInvention | Positive resist composition |
abstract | Provided is a positive resist composition which can be suitably used in microphotofabrication using far ultraviolet light, particularly ArF excimer laser light, and which solves the problems of line edge roughness and pattern collapse. about. (A) a repeating unit having a specific group at a terminal, a repeating unit having an acid-decomposable group protected by an alicyclic structure, and a repeating unit having an alicyclic structure substituted with a hydroxyl group; It contains a resin whose rate of dissolution in an alkaline developer is increased by the action of an acid, (B) a specific sulfonium compound having an enone structure that generates an acid upon irradiation with actinic rays or radiation, and (C) a solvent. A positive resist composition. [Selection figure] None |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8021824-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008099725-A1 |
priorityDate | 2002-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 328.