| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-952
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-942
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate |
2003-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_495f6fd4092e9651aecb86d3eefd7fe3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ebe8b8d3fdcf42788496d0b15ea1ec3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24ae4af68324cc7ddeaf78a009c32fb9 |
| publicationDate |
2004-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004145262-A |
| titleOfInvention |
Method for manufacturing semiconductor device and method for forming pattern |
| abstract |
An object of the present invention is to provide a method of manufacturing a semiconductor device and a method of forming a pattern capable of forming a fine pattern having a high aspect ratio with high definition and ease. A method for manufacturing a semiconductor device using a laminated film for pattern formation formed on a substrate, wherein the laminated film for pattern formation has a surface layer (upper layer), an inner layer (intermediate layer), and an innermost layer (lower layer). (A) the extinction coefficient k of the innermost layer is 0.3 or more and the extinction coefficient k of the inner layer is 0.12 or more; (B) the extinction coefficient k of the innermost layer is less than 0.3 and the extinction coefficient of the inner layer k is 0.18 or more. [Selection diagram] Fig. 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006084799-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100860479-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4575214-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006030641-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101010635-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006285095-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010510541-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102061488-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4541080-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8273519-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170010398-A |
| priorityDate |
2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |