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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
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filingDate 2002-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a602ba55b7a8a4b761a7e27ffbc5e703
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publicationDate 2004-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004143568-A
titleOfInvention Thin film forming equipment
abstract An object of the present invention is to provide a thin film forming apparatus that suppresses contamination on a discharge surface of an electrode. A discharge space in which a first electrode and a second electrode are opposed to each other, voltage applying means for applying a high-frequency voltage between the first electrode and the second electrode, a reactive gas and a reactive gas in the discharge space. Gas introducing means for introducing a discharge gas, and applying a voltage from the voltage applying means under atmospheric pressure or a pressure near the atmospheric pressure, to activate the reactive gas introduced into the discharge space A thin film forming apparatus for forming a film on a substrate disposed on the second electrode, wherein the discharge gas contains 50 to 100% by volume of nitrogen gas, and a discharge surface of the first electrode is formed. Is configured not to directly contact the reactive gas. [Selection diagram] Fig. 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006286325-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009263778-A
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