| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38c2e376c16f0e91536ef42dfc877bf7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-905 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2003-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_354b5ac08012e4133ddf00ae54290e38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e2cb0bb48bde0364aec28d1cfe22bcb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2a45c4b42179a0b0007eec0331b94d9 |
| publicationDate |
2004-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004134766-A |
| titleOfInvention |
Method for forming a film on a semiconductor substrate |
| abstract |
A method for cleaning contaminants from a CVD reactor chamber is provided. A method for cleaning a CVD reaction chamber with reactive oxygen species is provided. A method for forming a carbon-containing film on a semiconductor substrate in a CVD reaction chamber includes the steps of contacting the CVD reaction chamber with active oxygen species, transferring the semiconductor substrate into the CVD reaction chamber, and transferring the carbon-containing film to the semiconductor substrate. The method comprises the steps of: depositing a semiconductor substrate on the substrate; transferring the semiconductor substrate out of the CVD reaction chamber; and contacting the CVD reaction chamber with an activated fluorine species. Active oxygen species may be mixed with active fluorine species. Reactive oxygen species are the product of a plasma, which can be generated in a CVD reaction chamber or generated remotely and introduced into a CVD reaction chamber. [Selection diagram] FIG. 1 (a) |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011108737-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7581549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006074013-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100461344-C |
| priorityDate |
2002-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |