| abstract |
A method of manufacturing a semiconductor device capable of suppressing damage to wiring in a catalytic process performed in electroless plating of a Co-based material or the like in the manufacture of a semiconductor device having a wiring such as Cu, and a semiconductor manufactured by the method. Provide equipment. A method of manufacturing a semiconductor device having a metal wiring, comprising forming a metal wiring (13a, 13b) on a first insulating film 11 formed on a semiconductor substrate 10, and forming the metal wiring (13a, 13b). A barrier layer 15 for preventing the diffusion of the constituent elements of the metal wirings (13a, 13b) is formed as an upper layer, and a second insulating film 16 is formed as an upper layer for the barrier layer 15. Here, in the step of forming the metal wirings (13a, 13b), the metal wirings (13a, 13b) are formed to contain an additive that reduces damage to the metal wirings when the barrier layer 15 is formed. [Selection diagram] Fig. 1 |