| abstract |
Provided is a semiconductor optical modulator which is hardly affected by a use temperature and does not require application of a high reverse bias voltage. Quantum well layer 152 of the A light absorbing layer 105 and the quantum well structure is composed of In 1-XY Ga X Al Y N (0 ≦ X, Y ≦ 1,0 ≦ X + Y ≦ 1), the barrier layer 151 is composed of In 1-X′-Y ′ Ga X ′ Al Y ′ N (0 ≦ X ′, Y ′ ≦ 1, 0 ≦ X ′ + Y ′ ≦ 1), and the light absorption layer 105 has a natural polarization. In a state where an electric field is generated. [Selection diagram] Fig. 1 |