http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004128515-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2003-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d80a98ecf61309dbcba1d7482582956e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70c6a8dab5367931fd7a34a87a934d9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d1d89c208fb2fe90cf9e5d70bf49684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93d4c2d00ad471a814e26193662fa5ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01586b738d5c3da823a8b306e0b71efa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a80d358369a3a91fdaab2f06adf08bbb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e719ac35e184b31cab0b0e2df294550 |
| publicationDate | 2004-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004128515-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | A crystalline silicon film having excellent characteristics is obtained by removing or reducing the metal in a crystalline silicon film obtained by using a metal element, and an excellent crystalline silicon film is obtained by using the crystalline silicon film. A semiconductor device having high performance is obtained. A metal element for promoting crystallization of silicon is introduced into an amorphous silicon film, and the amorphous silicon film is crystallized by a first heat treatment to obtain a crystalline silicon film. Performing a second heat treatment in an atmosphere to remove or reduce the metal element present in the crystalline silicon film, remove the formed thermal oxide film, and remove the surface of the region from which the thermal oxide film has been removed; A semiconductor device obtained by forming a thermal oxide film thereon by thermal oxidation again, and a method for manufacturing the same. As the oxidizing atmosphere, an oxygen-containing oxidizing atmosphere, a halogen-containing oxidizing atmosphere, or the like is used. [Selection diagram] FIG. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2006038351-A1 |
| priorityDate | 1996-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 127.