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filingDate 2002-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004128112-A
titleOfInvention Method for manufacturing semiconductor device
abstract [Problem] In flattening a copper wiring, dishing or erosion occurs, and there is a problem such as a decrease in yield due to an increase in variation in wiring resistance value after flattening, a short circuit due to unpolished copper, and the like. A polishing liquid comprising an oxidizing agent, an organic acid, an anticorrosive, a surfactant, and pure water, a polishing pad, a fixed abrasive disk, and a dresser capable of dressing the surface of a polishing tool are provided. A polishing liquid for high-speed polishing is supplied to a polishing pad for polishing, and in the middle stage of processing, a polishing liquid having a high unevenness selectivity is supplied to a fixed abrasive disk to polish the residual step of copper, and polishing is performed. The problem can be solved by switching the polishing liquid so that the copper and the barrier film can be polished at almost the same speed immediately before or immediately after the exposure, and driving the dresser to perform conditioning during the processing. [Selection diagram] Fig. 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009056102-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009516928-A
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