http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004111743-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
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filingDate 2002-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d16a61146e19f9f69bde2ad99386303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd74775d75cbb5ea76fc223d08b56d81
publicationDate 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004111743-A
titleOfInvention Semiconductor optical device
abstract Provided is a semiconductor optical device having a temperature characteristic superior to that of a semiconductor optical device including an InGaAsP semiconductor and an InP semiconductor. The semiconductor optical device includes a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer, and a current block semiconductor region. The first conductivity type semiconductor region 3 is provided on the surface of the GaAs semiconductor. The active layer 5 is provided on the first conductivity type semiconductor region 3. The active layer 5 has a pair of side surfaces. The second conductivity type semiconductor layer 7 is provided on the active layer 5. The second conductivity type semiconductor layer 7 has a pair of side surfaces 7a. The current block semiconductor region 9 is provided on each side surface of the active layer 5 and on each side surface 7a of the second conductivity type semiconductor layer 7. The active layer 5 is made of a III-V compound semiconductor containing at least a nitrogen element as a V group. [Selection] Fig. 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7838893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4552549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008227545-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006005167-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006032730-A
priorityDate 2002-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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