http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004103986-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2002-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43b8dee8b51f3f3b69cb4f9e1922381b |
| publicationDate | 2004-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004103986-A |
| titleOfInvention | Semiconductor laser device and method of manufacturing the same |
| abstract | An object of the present invention is to increase a manufacturing cost of a semiconductor laser device including a protection element in which a laser diode end face is not destroyed even by a steep high voltage such as static electricity while avoiding an increase in the number of components and an increase in the size of the semiconductor laser device. Provided are a semiconductor laser device and a method for manufacturing the same, which have a structure free from defects. A diode including a p-type diffusion layer and an n − -type epitaxial layer is formed in a region of an n − -type epitaxial layer immediately below a laser diode. A high concentration n-type diffusion layer 10 is formed so as to surround the periphery of the p-type diffusion layer 9 which is the anode region of the diode. The p-type diffusion layer 9 and the n-type diffusion layer 10 constitute a Zener diode based on the breakdown voltage of the laser diode 11. [Selection diagram] Fig. 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007226246-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007331098-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1587151-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7408203-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007027357-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8263996-B2 |
| priorityDate | 2002-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 19.