http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004103677-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 2002-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05796df484d7fb76b422784300a83e15 |
| publicationDate | 2004-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004103677-A |
| titleOfInvention | Semiconductor light emitting device and module |
| abstract | An object of the present invention is to reduce a very high light density at the time of high-power operation and to achieve a very high current injection density at the time of high-power operation, while a main layer constituting part is made of a material having relatively excellent heat dissipation. To provide a semiconductor light emitting device that also realizes reduction. An Al xn Ga 1-xn As (0 <xn <0.40) first conductivity type first cladding layer (thickness t xn ) and an Al sn Ga 1-sn As (0 <sn ≦) are provided on a substrate. 1) First conductivity type second cladding layer (thickness t sn ), Al gn Ga 1-gn As (0 ≦ gn <0.40) first optical guide layer (thickness t gn ), active layer structure, Al gp Ga 1-gp As (0 ≦ gp <0.40) second optical guide layer (thickness t gp ), Al sp Ga 1-sp As (0 <sp ≦ 1) second conductivity type second cladding layer (thickness t sp) ), Al xp Ga 1-xp As (0 <xp <0.40) second conductivity type first cladding layer (thickness t xp ), gn <xn <sn; gp <xp <sp; 0.08 <Sn-xn; 0.08 <sp-xp; tsn / tgn <1.0; tsp / t A semiconductor light emitting device that satisfies gp <1.0. [Selection diagram] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9118167-B2 |
| priorityDate | 2002-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.