| abstract |
An object of the present invention is to provide a method for forming a polycrystalline thin film capable of efficiently forming a polycrystalline thin film such as a high-quality polycrystalline transparent conductive film, a polycrystalline silicon thin film, and a polycrystalline ferroelectric film. A gas containing a reactive gas is introduced into a discharge space between electrodes under an atmospheric pressure or a pressure near the atmospheric pressure to form a plasma state, and a thin film is formed by exposing a substrate to the gas in the plasma state. Thereafter, the thin film is subjected to laser annealing by irradiating the thin film with a laser beam under an atmosphere in which at least one kind of gas among hydrogen, nitrogen, and inert gas is circulated under an atmospheric pressure or a pressure near the atmospheric pressure. A method for forming a polycrystalline thin film. [Selection diagram] Fig. 3 |