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filingDate 2002-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_521dca406f07a4893b22da85488b8936
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publicationDate 2004-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004087535-A
titleOfInvention Method for manufacturing crystalline semiconductor material and method for manufacturing semiconductor device
abstract A method of manufacturing a crystalline semiconductor material capable of further improving crystallinity and a method of manufacturing a semiconductor device using the same are provided. Amorphous film is irradiated with 150 pulses (energy beam E1) uniformly using an XeCl excimer laser. The temperature at this time is such that, in the amorphous film 14, the silicon crystal grains having the {100} plane orientation with respect to the vertical direction of the substrate 11 are partially melted, and the silicon amorphous or {100} Are melted. A crystal having a {100} plane orientation is newly generated between the silicon oxide film 13 and the liquid phase silicon, and the generated silicon crystal is stochastically combined to newly form a crystal grain having a {100} plane orientation. Is repeated. A square crystalline film having a {100} plane orientation with respect to the vertical direction of the substrate 11 and having sharp grain boundaries is formed. [Selection] Fig. 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101424788-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007288173-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017508276-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8278163-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011515833-A
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