Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B13-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
filingDate |
2002-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_521dca406f07a4893b22da85488b8936 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8180d99e11857410fcdb989e6939cfc5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec0be56b15e00e1f856282e3144796b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72fe9ace7e6dfa3bb967e51635ad1e05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19ab67dff5ab20b95f020a82eef8efa6 |
publicationDate |
2004-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2004087535-A |
titleOfInvention |
Method for manufacturing crystalline semiconductor material and method for manufacturing semiconductor device |
abstract |
A method of manufacturing a crystalline semiconductor material capable of further improving crystallinity and a method of manufacturing a semiconductor device using the same are provided. Amorphous film is irradiated with 150 pulses (energy beam E1) uniformly using an XeCl excimer laser. The temperature at this time is such that, in the amorphous film 14, the silicon crystal grains having the {100} plane orientation with respect to the vertical direction of the substrate 11 are partially melted, and the silicon amorphous or {100} Are melted. A crystal having a {100} plane orientation is newly generated between the silicon oxide film 13 and the liquid phase silicon, and the generated silicon crystal is stochastically combined to newly form a crystal grain having a {100} plane orientation. Is repeated. A square crystalline film having a {100} plane orientation with respect to the vertical direction of the substrate 11 and having sharp grain boundaries is formed. [Selection] Fig. 2 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101424788-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007288173-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007053364-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017508276-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8278163-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011515833-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7169690-B2 |
priorityDate |
2002-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |