http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004079847-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7f3c8e04cf9d13fafdbb5b23cdef876f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2002-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c84517903a7edd127f21899aa113264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38ddf8b7cc70a56b382e229da9c6240e |
| publicationDate | 2004-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004079847-A |
| titleOfInvention | Method for forming fine pattern and method for manufacturing semiconductor device |
| abstract | A fine pattern is formed on a semiconductor surface easily and inexpensively. The integrated ion beam (FIB) device includes at least a step of selectively irradiating a surface of a single crystal substrate with first charged particles as FIB using an integrated ion beam (FIB) device, and a step of injecting second charged particles. A nanometer-level fine structure can be easily formed without using an expensive electron beam exposure apparatus or X-ray exposure apparatus. For example, a concave structure having a depth of about 250 nm and a diameter of about 50 nm, and a fine structure having a wall thickness of about 5 nm can be easily formed on the surface of the single crystal substrate 1. [Selection diagram] Fig. 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008311620-A |
| priorityDate | 2002-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.