| abstract |
An LED having excellent luminous efficiency at a wavelength of 380 nm or less is provided. An n-cladding layer, a light-emitting layer, a p-block layer, and a p-cladding layer are formed on a substrate. As the light emitting layer 22, a quantum well structure of an AlInGaN well layer / AlGaN barrier layer is used. By optimizing the composition and thickness of the well layer and the barrier layer, the luminous efficiency is improved. For example, n-Al 0.2 Ga 0.8 N barrier layer (10 nm) / undoped Al 0.1 In 0.05 Ga 0.85 N well layer (1.25 nm) / undoped Al 0.2 Ga 0.8 The SQW composed of the N barrier layer is defined as the light emitting layer 22. [Selection diagram] Fig. 1 |