| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38c2e376c16f0e91536ef42dfc877bf7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2003-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad8df5972d3ede61079b17396bafdd18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a38825981e7206dfebf71ed72583bb2 |
| publicationDate |
2004-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004047996-A |
| titleOfInvention |
Method of depositing nitrogen-doped silicon carbide film |
| abstract |
An improved method for depositing a Si-CN material serving as an etch stop layer on a substrate using PECVD. The process for depositing silicon carbon nitride (Si-CN) material involves plasma enhanced chemical vapor deposition (PECVD), where the chemical precursor for silicon and carbon is nitrogen gas (N2). Assisted by Nitrogen gas participates in film formation as well as assists other chemical precursors and plasma species during the PECVD process. The nitrogen carrier gas, like other chemical precursors, is activated by plasma energy. Excited species of nitrogen gas react with excited species of silicon and carbon to deposit Si-CN material on the substrate. The use of nitrogen gas improves the stability of the plasma and eliminates arcing during the PECVD process. [Selection diagram] Fig. 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015529852-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180037670-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015522707-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011210881-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101930997-B1 |
| priorityDate |
2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |