http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004047741-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94e951cbbc8fc64be8a44ba027e4f953 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2002-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a1a379bcc28268f1bdf6e8f70da0ef2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5d0a16b6eb36a0926a6be21b1268996 |
| publicationDate | 2004-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004047741-A |
| titleOfInvention | Bonded dielectric separation wafer and method of manufacturing the same |
| abstract | Provided is a bonded dielectric separation wafer capable of directly bonding an active layer wafer and a support substrate wafer, reducing the number of manufacturing steps, and shortening the manufacturing time, and a method of manufacturing the same. A high-temperature polysilicon layer (16) is ground and polished over substantially the entire surface on the bonding side so that the columnar crystals of polysilicon have the same crystal orientation. Therefore, at the time of polishing, in the region of the layer 16 where the dielectric separation groove 13 is formed, the degree of erosion of the grain boundary portion by the polishing liquid is substantially equal to the other region on the surface on the bonding side. As a result, the crystal planes of the polysilicon crystal grains are substantially the same over substantially the entire surface on the bonding side, and no voids are generated due to the depression at the grain boundary portion of the layer 16. The active layer wafer 10 and the support substrate wafer 20 can be directly bonded, and the number of steps can be reduced and the manufacturing time can be reduced. [Selection diagram] Fig. 1 |
| priorityDate | 2002-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.