http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004037514-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07dcb6c7c2d9e3ec810acb3d942b2bdd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b150769596bad1eb8c44091069f9392b |
| publicationDate | 2004-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004037514-A |
| titleOfInvention | Pattern formation method |
| abstract | An object of the present invention is to provide a pattern forming method capable of forming a resist pattern capable of ultra-fine processing and having excellent basic physical properties such as dry etching resistance, developability, and pattern shape. The radiation-sensitive resin contains (A) an alkali-insoluble or alkali-insoluble resin having a specific repeating unit, and (B) a radiation-sensitive acid generator that generates an acid upon irradiation with radiation. Provided is a method for forming a pattern, comprising forming a thin film having a thickness of 20 to 150 nm made of a composition on a substrate, irradiating the thin film with a radiation, and developing. [Selection diagram] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101470037-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2202577-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011180568-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010170094-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8252518-B2 |
| priorityDate | 2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 843.