http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004031652-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2002-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21d9799f87afc7be7126d137ebe58a16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_524b3ecfab21f457030227b4e85bc8e8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_121e52465137de68399dd8b6d1ff41d2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab0d510d5b7ba591bc29e121c5457bdd |
| publicationDate | 2004-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004031652-A |
| titleOfInvention | Heterojunction field effect transistor |
| abstract | An object of the present invention is to form a planar doped layer of carbon having a steep impurity distribution in a vertical direction to effectively prevent deterioration of device characteristics due to diffusion of a dopant. A spacer layer (105) and a Schottky junction forming layer (107) constituting a part of a barrier layer are formed from an undoped compound semiconductor layer (InP, GaP, AlP, etc.) containing P as a component element. Then, a carbon planar doped layer (106) is formed on the surface of the spacer layer (105) in contact with the Schottky junction forming layer (107). [Selection diagram] Fig. 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009060043-A |
| priorityDate | 2002-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.