| abstract |
An object of the present invention is to provide a polishing liquid capable of sufficiently lowering an etching rate while suppressing a polishing rate, suppressing generation of dishing and roughening of a copper surface, and forming a highly reliable embedded pattern of a metal film. . A polishing liquid containing an oxidizing agent, a metal oxide dissolving agent, a metal anticorrosive, and water, and having an etching rate of 1.0 nm / min or less at 25 ° C. [Selection diagram] None |