| abstract |
An object of the present invention is to provide a polishing liquid capable of maintaining low polishing friction during CMP polishing and forming a highly reliable embedded pattern of a metal film. The polishing solution contains an oxidizing agent, a metal oxide dissolving agent, a water-soluble compound for reducing polishing friction, and water, and preferably has a partition coefficient (LogP) of 2 or more or 0 or less. A polishing liquid that is: [Selection diagram] None |