abstract |
A resist material comprising, as a base resin, a polymer compound obtained by copolymerization of a silicon-containing monomer and a polar monomer having a LogP or cLogP value of 0.6 or less. . The resist material of the present invention is sensitive to high energy rays and has excellent sensitivity, resolution and oxygen plasma etching resistance at a wavelength of 300 nm or less. Therefore, the resist material of the present invention can be used as a material for a two-layer resist particularly excellent in these properties, and can easily form a fine pattern perpendicular to the substrate. It is suitable as a material for forming a fine pattern. [Selection diagram] None |