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filingDate 2002-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f9fbc08f172810e4d363236511b898d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b5d9834cc3c21bebcd7ff124f283bd
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publicationDate 2004-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004006522-A
titleOfInvention IC chip manufacturing method
abstract Provided is a method for manufacturing an IC chip which can prevent breakage of the wafer even if the wafer is extremely thin, having a thickness of about 50 μm, improve the handleability, and can favorably process the IC chip. At least a step (1) of forming a groove deeper than a completed chip thickness from a circuit pattern forming surface side along a dicing line of a wafer on which a circuit pattern is formed, by stimulating at least one surface. Step 2 of fixing the wafer to the support plate through a double-sided adhesive tape containing a gas generating agent that generates a gas, polishing the wafer to the thickness of a completed chip while fixing the wafer to the support plate and individually A method for producing an IC chip, comprising: a step 3 of separating the chip into chips; and a step 4 of applying a stimulus to the double-sided adhesive tape, wherein in the step 2 of fixing the wafer to the support plate via the double-sided adhesive tape, A method for manufacturing an IC chip in which a surface containing a gas generating agent is bonded to a surface of a wafer on which a circuit pattern is formed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4638172-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005294536-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010212474-A
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type http://data.epo.org/linked-data/def/patent/Publication

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