| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a8a9c815fc8478d3e08d53d4dd6cd87 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66863
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
2003-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86f6da9ed2af80206788d8bd6d77b3a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e925a9789a878fc69e5e81a1b93926e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b49f7504bc8979a500d628aab1d151af |
| publicationDate |
2004-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004004569-A |
| titleOfInvention |
Method for manufacturing compound semiconductor device |
| abstract |
A method for manufacturing a compound semiconductor device having an asherless process is provided. In a method of manufacturing a compound semiconductor device having a lift-off step, the lift-off step includes forming a resist mask having an electrode opening on an active layer of the compound semiconductor formed on the substrate of the compound semiconductor. Forming a metal layer on the resist mask and on the active layer in the electrode opening; and dissolving the resist mask and removing the metal layer formed on the resist mask to form an active layer in the electrode opening. And an exfoliation step including an exfoliation step in which an electrode is formed by leaving a metal layer on the layer, wherein the exfoliation step comprises exfoliation mainly comprising one or more compounds selected from the group consisting of amine compounds and nitrogen-containing cyclic compounds. The step of removing the resist mask to the extent that it is not necessary to remove the residue of the resist mask by ashing using the liquid. [Selection diagram] Fig. 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012015232-A |
| priorityDate |
2002-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |