Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0445 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 |
filingDate |
2001-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2003-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2003530716-A |
titleOfInvention |
Method for forming vias in silicon carbide, and resulting devices and circuits |
abstract |
(57) [Summary]nDisclosed is a method of making an integrated circuit on a silicon carbide substrate that eliminates wire bonding that can cause undesirable inductance. The method includes making a semiconductor device on a first surface of a silicon carbide substrate and at least one metal contact for the device on the first surface of the substrate. Next, the second surface on the opposite side of the substrate is polished until it is substantially transparent. The method then masks the polished second surface of the silicon carbide substrate to define a predetermined position for vias that are on the first surface opposite the device metal contacts. Etching the desired via through the desired masked location until the etching reaches the metal contact on the first surface; and metallizing the via from the second surface of the substrate to the first of the substrate; Providing electrical contact to metal contacts and devices on one surface. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009033097-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017157585-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8202796-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007157806-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7459788-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4612534-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012033580-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012033581-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005083761-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009506561-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490169-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017150080-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008532290-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008140861-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010539728-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2005083761-A1 |
priorityDate |
2000-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |