http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003519443-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate | 2001-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003519443-A |
| titleOfInvention | Chemical vapor deposition method and capacitor forming method for forming high-k dielectric layer |
| abstract | Abstract: A chemical vapor deposition method for forming a high-k dielectric layer includes placing a substrate in a chemical vapor deposition reactor. At least one metal and N 2 O with a precursor, a high k dielectric layer having a metal of oxygen and said at least one metal precursor under conditions effective to deposit onto the substrate, said reactor Provided within. N 2 O, a part of the period of the deposition period, O 2 introduced into the reactor, O 3, NO, compared to any of the NO x, is greater than equal to or at least 90% volume concentration Concentration in the reactor. In one embodiment, a portion of the period of the sedimentation, O 2, O 3, NO, both of the NO x is not introduced into the reactor. In one embodiment, the above process forms a capacitor. In a preferred embodiment, the above technique can be used to form a smooth, continuous dielectric layer without haze or discrete island nuclei. |
| priorityDate | 2000-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.