http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003517517-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-54 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 2000-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003517517-A |
| titleOfInvention | Sputtering method using virtual shutter |
| abstract | Abstract: Gallium arsenide damage to a substrate (27) during plasma ignition for PVD processing is eliminated by a virtual shutter. The virtual shutter provides the ability to minimize the high energy particles created during plasma ignition reaching the GaAs substrate without the disadvantages of a mechanical shutter. The plasma firing process sequence includes, for example, (a) changing the plasma firing gas component to include xenon, krypton, or fluorinated molecular gas; and (b) at least doubling the distance from the target to the substrate during plasma firing. (C) increasing the magnetron field strength permanently or during plasma ignition to about 400 gauss; (d) sputtering by sputtering whenever the system (10) is idle for a few minutes. (E) adjusting the power supply (30) so that the power ramps to the target (24) for more than 5-6 seconds, and / or (f) in the GaAs substrate (27). High in combination with controlling other parameters, such as using a simple electrical circuit to drain the charge buildup Using the gas ignition gas bursts. |
| priorityDate | 1999-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.