| abstract |
Abstract: Bi-, Sr-, and Ta-oxide films are formed on a heated substrate by decomposing precursors of these oxides on the substrate surface using chemical vapor deposition. The precursor of the Bi oxide is a Bi complex having at least one alkoxide group and decomposing and depositing at a temperature below 450 ° C. Bi oxide, Sr oxide and Ta oxide films obtained by low-temperature CVD are mainly non-ferroelectric, but can be converted to ferroelectric films by a subsequent heating process. |