http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003510664-A
Outgoing Links
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|---|---|
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| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2-004 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-0625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F2-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F2-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04B10-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-062 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2000-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003510664-A |
| titleOfInvention | Integrated wavelength tunable one-stage and two-stage pure optical wavelength converter |
| abstract | SUMMARY A semiconductor tunable laser (10) and an interferometer (12) coupled to the tunable laser (10) are manufactured monolithically in a semiconductor heterostructure. Lasers also include buried ridge stripe waveguide lasers. The interferometer (12) has a semiconductor optical amplifier (38) coupled to each arm. A cross gain semiconductor optical amplifier converter is coupled to the interferometer (12). The semiconductor optical amplifier (38) coupled to each arm is biased such that the optical path length difference between the two arms is in opposite phase and causes destructive interference. The output of the tunable laser (10) is coupled to a combiner. The semiconductor optical amplifier (38) is used as a gain controller of the semiconductor optical amplifier in the interferometer so that the wavelength of the input signal having a wider range of power can be converted. The heterostructure substrate includes a low bandgap waveguide layer and a thinner multiple quantum well active region disposed over the low bandgap waveguide layer. The heterostructure substrate is formed by selectively removing the quantum well region above the waveguide layer so that active and passive portions can be formed in the waveguide layer without butt junction regrowth. It has an absorbing passive element. The invention is also characterized as a method of fabricating the previously disclosed integrated optical device on a heterostructured substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104104011-A |
| priorityDate | 1999-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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