http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003504869-A

Outgoing Links

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
filingDate 2000-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2003-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003504869-A
titleOfInvention Fabrication process for CU damascene structure without dishing
abstract Abstract: Fabrication of copper damascene wiring includes depositing an oxide layer (304) on an underlying conductive layer (102), such as a substrate or a metal layer, which is then patterned. Is etched. Next, a barrier layer (308) with an optional copper seed layer is deposited on the patterned oxide layer (304). The barrier layer (308) is patterned and etched to remove some of the barrier material. Plate copper (318) on the barrier layer (308). CMP polishing is performed to bring the copper layer (318) to the level of the barrier layer (308). Polishing is continued, further polishing the barrier layer (308) and any remaining copper (318) to the level of the oxide layer (304). The result is a copper damascene structure without dishing.
priorityDate 1999-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978
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Total number of triples: 19.