http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003344480-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b17f9f55c0d8529257c23308b5f4437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a48f4904a2e21ab017815fc7652bcc0d |
| publicationDate | 2003-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003344480-A |
| titleOfInvention | Semiconductor device measuring apparatus and semiconductor device measuring method |
| abstract | (57) Abstract: A contact resistance between an electrode on a tester side and a lead electrode of a lead terminal of a semiconductor device is reduced and a stable contact is obtained. A first tester includes a tester having a motherboard on which a wiring pattern is formed, and a measurement sheet contact having first and second contacts formed with a flexible sheet interposed therebetween. A contact 33 is formed with a surface electrode in surface contact with the lead electrode of the semiconductor device, a second contact 29 is formed with a back electrode in contact with the wiring pattern, and the first contact and the second contact are formed through holes. Electrical connection is made at 34. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103439641-A |
| priorityDate | 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.