http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003338590-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb022d6b6937718c5a71f2bc17b01ae3 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13055 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 |
filingDate | 2002-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18266931d0db060c70617c1ac49f312e |
publicationDate | 2003-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2003338590-A |
titleOfInvention | Semiconductor device and manufacturing method thereof |
abstract | (57) [Problem] To provide a semiconductor element capable of obtaining a withstand voltage with good reproducibility and a method of manufacturing the same. SOLUTION: A semiconductor substrate 10 having an inclined side wall at which an end of a pn junction interface is exposed and comprising an n + type semiconductor region 11, an n type semiconductor region 12, and a p type semiconductor region 13, and a surface of the semiconductor substrate 10 in, is placed in contact with an end portion of the pn junction interface, a glass protective film 14 is uniformly distributed a negative charge, an anode electrode 15 disposed on top of the p-type semiconductor region 13, n + -type semiconductor A cathode electrode 16 disposed below the region 11. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006344782-A |
priorityDate | 2002-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.