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publicationDate 2003-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003338590-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract (57) [Problem] To provide a semiconductor element capable of obtaining a withstand voltage with good reproducibility and a method of manufacturing the same. SOLUTION: A semiconductor substrate 10 having an inclined side wall at which an end of a pn junction interface is exposed and comprising an n + type semiconductor region 11, an n type semiconductor region 12, and a p type semiconductor region 13, and a surface of the semiconductor substrate 10 in, is placed in contact with an end portion of the pn junction interface, a glass protective film 14 is uniformly distributed a negative charge, an anode electrode 15 disposed on top of the p-type semiconductor region 13, n + -type semiconductor A cathode electrode 16 disposed below the region 11.
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