| abstract |
(57) [PROBLEMS] To provide a semiconductor device excellent in electrical characteristics and reliability by preventing corrosion of an electrode caused by a gap formed at an interface between an organic insulating film and a plating film, and a method for manufacturing the same. provide. An electrode 2 is formed on a semiconductor substrate 1 having a semiconductor integrated circuit and is electrically connected to the semiconductor integrated circuit, and an opening 3 is formed on the semiconductor substrate 1 and exposes the electrode 2. In a semiconductor device having an organic insulating film 4 and a bump electrode formed on the electrode 2 via a bump base metal film, the bump base metal film is formed by a first plating formed by a first electroless plating method. A first plating layer having a film 6 and a second plating film 7 formed on the first plating film 6 by a second electroless plating method different from the first electroless plating method. The film thickness of the film 6 is larger than the film thickness of the organic insulating film 4, and the peripheral edge portion 6 a of the first plating film 6. Is formed so as to overlap the organic insulating film 4. |