http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003324137-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2002-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_116fe4c64e3eb3a653c32d6f05b9e9ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82c179d28d80741fd77d1f6b7c46ebc1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7afb364b51b6042caa5dfeb368974966 |
| publicationDate | 2003-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003324137-A |
| titleOfInvention | Method for measuring breakdown voltage of semiconductor epitaxial wafer and semiconductor epitaxial wafer |
| abstract | PROBLEM TO BE SOLVED: To provide a method for measuring a breakdown voltage of a semiconductor epitaxial wafer which is easy to measure and a semiconductor epitaxial wafer excellent in a breakdown voltage. In a method for measuring a breakdown voltage of a semiconductor epitaxial wafer according to the present invention, a breakdown voltage between electrodes is measured only with a Schottky electrode without requiring an ohmic electrode. Therefore, since the step of forming the ohmic electrode is omitted, the semiconductor epitaxial wafer 10 can be easily subjected to the withstand voltage measurement test. Thereby, the breakdown voltage measurement of the semiconductor epitaxial wafer 10 can be easily performed. In addition, since the inter-electrode withstand voltage V2 can be measured before manufacturing an actual device from the wafer 10, an unqualified wafer 10 can be excluded before being sent to the actual device manufacturing process. Therefore, The loss can be reduced as compared with the conventional measurement method of measuring the inter-electrode breakdown voltage V2 after the actual device is manufactured. |
| priorityDate | 2002-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.