http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003318479-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2002-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_489ff67e214846902ac622317657d857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2d115d2fd44c6fc30dc2a52f837c40c |
| publicationDate | 2003-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003318479-A |
| titleOfInvention | Method for measuring contact resistance of compound semiconductor light emitting device |
| abstract | (57) [Summary] [PROBLEMS] To provide a method for simply measuring the contact resistance directly using a compound semiconductor light emitting device itself without producing a dedicated evaluation sample. SOLUTION: A relationship between a distance L between electrodes and a passing resistance R of a compound semiconductor light emitting device having a compound semiconductor layer, a contact electrode layer and a plated conductive layer on a substrate in this order is determined, and the distance L = 0 between electrodes is determined from the relationship. determine the flow resistance R 0 in, and determines the contact resistance of the compound semiconductor light-emitting element based on said R 0, the contact resistance measuring method of a compound semiconductor light-emitting device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4570422-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006066411-A |
| priorityDate | 2002-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.