| abstract |
PROBLEM TO BE SOLVED: To fundamentally review the material properties of a pin layer, a free layer, and a spacer layer of a spin valve structure, thereby enabling a large resistance change amount, and a perpendicular conduction type magnetoresistive element, and It is an object to provide a magnetic head and a magnetic reproducing device using such a magnetoresistive element. SOLUTION: By combining a magnetic material having a negative spin-dependent bulk scattering parameter β and a spacer layer capable of obtaining a negative spin-dependent interface scattering parameter γ, a large value can be obtained while utilizing the negative magnetoresistance effect. Provided is a magnetoresistance effect element capable of obtaining a magnetoresistance change rate. |