| abstract |
(57) Abstract: A compact heating element for a micro reaction chamber is provided. According to the present invention, a thin film transistor formed of polycrystalline silicon is located adjacent to a thermal reaction chamber. The gate electrode of the transistor is formed in a silicon substrate and a gate dielectric is located on the gate electrode. A pass transistor is coupled to the gate electrode, the pass transistor being located adjacent to the gate electrode of the thin film heating transistor and having source / drain regions in the same semiconductor substrate. When the pass transistor is enabled, a voltage is applied to the gate electrode causing current to flow from the drain to the source of the thin film transistor. This current flow passes through the high resistance region, Thereby, heat is generated and transferred to the thermal reaction chamber. |