http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003282829-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
filingDate | 2002-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41589ac1869ad135d89adacc75080959 |
publicationDate | 2003-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2003282829-A |
titleOfInvention | Ferroelectric memory element, method for manufacturing the same, and apparatus for manufacturing the same |
abstract | (57) [Problem] To provide a method of manufacturing a ferroelectric memory element capable of forming a capacitor portion on a surface of a base material with good shape accuracy and capable of coping with a large area of the base material. A method of manufacturing a ferroelectric memory element including a capacitor portion having a laminated structure of a first electrode, a ferroelectric film, and a second electrode on a base material, the method comprising: After forming a pattern of the surface modification film 30 having a surface characteristic in which the material constituting the capacitor portion is difficult to deposit on the region excluding the formation region of the second electrode 32, the first electrode 32, the ferroelectric film 34, and the second electrode 36 are formed. Form in order. One substrate 2 The surface modification film 30 formed on 5 is divided into a plurality of partial patterns, and each partial pattern is formed by microcontact printing. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008098645-A |
priorityDate | 2002-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.