| abstract |
PROBLEM TO BE SOLVED: To prevent a grain boundary from being formed in a channel forming region of a TFT and to significantly reduce the mobility of the TFT, reduce an on-current, and increase an off-current due to the grain boundary. Using a laser crystallization method that can prevent It is an object to provide a semiconductor device production system. SOLUTION: Stripes (stripes) or rectangular irregularities are provided. Then, the semiconductor film formed over the insulating film is irradiated with continuous oscillation laser light along the unevenness of the stripe of the insulating film or along the direction of the long axis or the short axis of the rectangle. In this case, continuous oscillation laser light is most preferably used, but pulsed laser light may be used. |