| abstract |
(57) [Problem] To provide a method for manufacturing a semiconductor element which can operate at high speed, has high current driving capability, and has small variation among a plurality of elements. SOLUTION: After forming a plurality of insulating films extending in a linear stripe pattern on an insulating surface and attaching an element which promotes crystallization of a semiconductor to the plurality of insulating films, the plurality of insulating films are formed. Forming an amorphous semiconductor film covering the amorphous semiconductor film, and irradiating the amorphous semiconductor film with a linear laser beam to melt and recrystallize to form a crystalline semiconductor film having a flat surface, In the crystalline semiconductor film, a crystalline semiconductor region provided in a concave portion including the plurality of insulating films is used as a channel formation region. |